A 300-GHz Voltage-Controlled Oscillator Using a Coupled-Line Resonator with 177.6-dBc/Hz FoM and 5.6-dBm Peak Output Power
IEEE APMC 2025
250-nm InP DHBT
Hyunjoon Kim
A 127-GHz High-Efficiency Push-Push Oscillator Using Decoupled Harmonic Bypass Stub in 100-nm InP HEMT Technology
IEEE APMC 2025
100-nm InP HEMT
Seungwoo Shim
A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage
JEES 2025
65-nm CMOS
Eunjung Kim
129–145-GHz Low-Noise Amplifier Waveguide Module With Low-Loss Chip-to-Waveguide Transition for CMOS Technologies
IEEE TMTT 2025
28-nm CMOS
Kyeonghun Choi
A 200-280 GHz InP HBT Power Amplifier Using Double-stacked Common-base Core with Design Analysis and Modulation Measurement
IEEE TTST 2025
250-nm InP DHBT
Gunwoo Park
A Wideband Dual-Mode Power Amplifier with Slotline-Based Series-Parallel Combiner
IEEE RFIC 2025
28-nm CMOS
Gunwoo Park
An Octave Tuning-Range Frequency Generator Integrating a Quad-Core VCO Using Quad-Mode Coupled Dual-Path Inductor With a Wideband ILFD
IEEE JSSC 2025
28-nm CMOS
Hyunjoon Kim
6.1-to-41.5GHz CMOS Low-Noise Amplifier
JEES 2025
28-nm CMOS
Yeheon Park
131.5–137.5 GHz Low-Power Sub-Harmonic Receiver
IEEE Access 2024
28-nm CMOS
Hyunkyu Lee
256–287 GHz Full 360° Hybrid-type Phase Shifter
IEEE IMS 2024
250-nm InP DHBT
Eunjung Kim
G,H-Band Power Amplifier
IEEE RFIC 2024
130-nm SiGe BiCMOS
Gunwoo Park
Quad-Core Quad-Mode VCO
IEEE RFIC 2024
28-nm CMOS
Hyunjoon Kim
E-band Power Amplifier
IEEE TCAS-II 2023
28-nm CMOS
Gunwoo Park
0.78–0.91-THz Wideband Frequency Tripler
IEEE Access 2023
250-nm InP DHBT
Kyoungho Yeom
275–320-GHz Reflection-Type Phase Shifter
IEEE MWCL 2022
250-nm InP DHBT
Eunjung Kim
Mm-Wave Distributed Amplifier
IEEE TTST 2022
250-nm InP DHBT
Iljin Lee
232-250 GHz Traveling-Wave Frequency Doubler
IEEE MWCL 2022
250-nm InP DHBT
Kyoungho Yeom
Ka-Band Amplifier
MDPI 2022
65-nm CMOS
Byungwook Kim
Vector-Sum Phase Shifter
JEES 2022
65-nm CMOS
Eunjung Kim
Distributed Drain Mixer
IEEE Access 2021
0.25-µm GaAs p-HEMT
Hyunkyu Lee
mm-Wave Multi-Mode Asymmetric Power Amplifier
IEEE Access 2021
65-nm CMOS
Seungwon Park
G-Band VCO
IEEE T-MTT 2021
60 nm GaN HEMT
Dongkyo Kim
15-43GHz Compact Digital Distributed Attenuator
IEEE T-MTT 2020
65nm CMOS
Kwangwon Park
Ku-band multifunction transmitter and receiver
MDPI 2020
0.25-µm GaAs
Hyunkyu Lee
108–316 and 220–290 GHz frequency doublers
IEEE T-MTT 2020
250-nm InP HBT
Iljin Lee
WR-1.5 High-Power Frequency Doubler
IEEE MWCL 2020
250-nm InP HBT
Iljin Lee
W-Band Injection-Locked Frequency Octupler
IEEE MWCL 2019
100-nm GaAs pHEMT
Kwangwon Park
WR-3.4 band fundamental VCO
IEEE T-MTT 2019
250-nm InP DHBT
Dongkyo Kim
D-Band Multiplier-Based OOK Transceiver
IEEE Access 2019
65-nm bulk CMOS
Bohee Suh
D-Band Common-Base Amplifiers in 0.18-μm SiGe HBT Technology
IEEE TCAS-II 2017
0.18-um SiGe
Junho Ko
Mm-Wave Distributed Amplifier
Wiley MOTL 2015
65-nm CMOS
Iljin Lee
X-Band Amplifier
Wiley MOTL 2015
0.11-μm CMOS
Seungwon Park
220–320-GHz Vector-Sum Phase Shifter
IEEE T-MTT 2015
250-nm InP DHBT
Younghwan Kim
A Fully-Integrated 40–222 GHz in InP HBT Distributed Amplifier
IEEE MWCL 2014
250-nm InP DHBT
Sangwoo Yoon